IEEE1mon
Extraction of Subgap Density of States in Amorphous In–Ga–Zn–O Thin-Film Transistors by Measuring Capacitor-on-Gate Structure
The capacitor-on-gate structure consists of a capacitor connected to the gate node of amorphous In–Ga–Zn–O (a-IGZO) thin-film transistor (TFT). When the gate is directly swept and indirectly swept ...
IEEE1mon
Low-Power a-IGZO TFT Emission Driver With Shoot-Through Current-Free QB Control Block
Abstract: This paper proposes an emission driver for active-matrix organic light emitting diode (AMOLED) displays using amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs). The ...