With 3nm node devices in production and 2nm nodes ramping toward first-silicon, the importance of precise film measurement is only growing in significance as fabs seek to maintain the performance and ...

Abstract: This study reports the ultraviolet (UV) light induced effects on the thin film transistor (TFT) based on the amorphous indium-gallium-tin-oxide (IGZO) material with the double gate structure ...

Abstract: This paper proposes an emission driver for active-matrix organic light emitting diode (AMOLED) displays using amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs). The ...