Swiss innovation centre CSEM, in collaboration with Dutch deep-tech startup QDI Systems, has developed what is claimed to be ...

After setting fundamental and harmonic impedance to power-added-efficiency matching conditions, Ohki and co-workers ...

Compound semiconductor firm WIN Semiconductors has launched a 0.12 μm gate-length D-mode GaN HEMT technology on SiC ...

Navitas Semiconductor has announced a partnership with BrightLoop supporting their latest series of hydrogen fuel-cell ...

TrendForce adds that while Renesas has reportedly decided to halt in-house production of SiC power chips, the company does ...

French MBE firm Riber has announced the sale of an MBE 412 research system to an Asian university institute. The university ...

The Fraunhofer IAF process simplifies the production with a MOEMS (micro-opto-electro-mechanical system) grating scanner in ...

Under the collaboration, Soitec will supply PSMC 300mm substrates incorporating a release layer, Transistor Layer Transfer ...

Sumitomo Electric and Osaka Metropolitan University have successfully fabricated a GaN-HEMT on a 2-inch polycrystalline ...

From June 10 to 12 at GreenTech 2025 in Amsterdam, Ams Osram will be exhibiting its latest-generation of LED and sensor ...

Infineon has announced the first of a new family of radiation hardened GaN HEMTs, fabricated at Infineon’s own foundry, based ...

Ontario-based VueReal, the developer of MicroSolid Printing technology, has announced a partnership with ACA TMetrix, a ...